Jing chen syracuse12/3/2023 ![]() ![]() Lyu, Gang Wei, Jin Song, Wenjie Zheng, Zheyang Zhang, Li Zhang, Jie Feng, Sirui Chen, Jing Article IEEE Transactions on Electron Devices, v. GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits 697-700Ĭhen, Tao Zheng, Zheyang Feng, Sirui Zhang, Li Song, Wenjie Chen, Jing Article GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping Song, Wenjie Zhang, Jie Zheng, Zheyang Feng, Sirui Yang, Xuelin Shen, Bo Chen, Jing Article GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversionĪIP Advances, v. Zhong, Kailun Wang, Yuru Lyu, Gang Wei, Jin Sun, Jiahui Chen, Kevin J. IEEE Transactions on Industrial Electronics, v. 107-110Ĭhen, Junting Chen, Tao Jiang, Zuoheng Wang, Chengcai Zheng, Zheyang Wei, Jin Chen, Jing Hua, Mengyuan Conference paperĦ50-V Normally-off GaN/SiC Cascode Device for Power Switching Applications Proceedings of the International Symposium on Power Semiconductor Devices and ICs, v. Switching Performance of GaN p-FET-bridge (PFB-) HEMTs Studied with Mixed-mode TCAD Simulation Suppressing the Reverse Recovery of Si Super-Junction MOSFET with a Low-Voltage GaN HEMT in a Cascode Configuration Shu, Ji Sun, Jiahui Zheng, Zheyang Chen, Jing Conference paper ![]() Protection of SiC MOSFET from Negative Gate Voltage Spikes with a Low-Voltage GaN HEMT Sun, Jiahui Zheng, Zheyang Zhang, Li Ng, Yat Hon Shu, Ji Chen, Tao Chen, Jing Conference paper Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type p-GaN Gate HEMTs Wu, Yanlin Nuo, Muqin Yang, Junjie Zheng, Zheyang Zhang, Li Chen, Jing Hua, Mengyuan Hao, Yilong Yang, Xuelin Shen, Bo Wang, Maojun Wei, Jin Conference paper High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT ![]() Liao, Hang Zheng, Zheyang Chen, Tao Zhang, Li Cheng, Yan Chen, Long Yuan, Li Chen, Jing Conference paper 29-31Ĭheng, Yan Ng, Yat Hon Zheng, Zheyang Chen, Jing ArticleĬonductivity Enhancement Induced by Confined Vicinal Hole Storage in Enhancement-mode p-GaN Gate Double-Channel HEMTs RF Enhancement-Mode p-GaN Gate HEMT on 200mm-Si Substrates 35, (12), March 2023, article number 2208960Ĭhen, Junting Zhao, Junlei Feng, Sirui Zhang, Li Cheng, Yan Liao, Hang Zheng, Zheyang Chen, Xiaolong Gao, Zhen Chen, Kevin J. Sun, Jiahui Zheng, Zheyang Zhang, Li Chen, Jing Articleįormation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium NitrideĪdvanced Materials, v. IEEE Transactions on Industrial Electronics, April 2023, article number 10100647, p. ArticleĬharacteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs Zhang, Meng Zhang, Yamin Li, Baikui Feng, Shiwei Hua, Mengyuan Tang, Xi Wei, Jin Chen, Kevin J. IEEE Journal of the Electron Devices Society, v. Wu, Yanlin Wei, Jin Wang, Maojun Nuo, Muqin Yang, Junjie Lin, Wei Zheng, Zheyang Zhang, Li Hua, Mengyuan Yang, Xuelin Hao, Yilong Chen, Jing Shen, Bo ArticleĬell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off Tang, Ho-Tin Chung, Henry Shu-Hung Chen, Jing ArticleĪn Actively-Passivated p-GaN Gate HEMT with Screening Effect Against Surface Traps IEEE Transactions on Power Electronics, v. Adaptive Level-Shift Gate Driver with Indirect Gate Oxide Health Monitoring for Suppressing Crosstalk of SiC MOSFETs ![]()
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